Low-voltage-driven pentacene thin-film transistor with an organic-inorganic nanohybrid dielectric

The authors report on the fabrication of pentacene-based thin-film transistors (TFTs) with a 13 nm-thick nanohybrid superlattice-type dielectric composed of ten units of molecular aluminum oxide (AlOx)-self-assembled multilayer (SAMu) lattice on indium-tin-oxide (ITO) glass or on n(+)-Si substrate. The AlOx-SAMu nanohybrid layers showed high dielectric capacitances of 187 and 233 nF/cm(2) on ITO glass and on n(+)-Si substrate, respectively, along with a high dielectric strength of 4 MV/cm in both cases. Our pentacene-TFTs showed a maximum field effect mobility of 0.92 cm(2)/V s, operating at -3 V with an on/off current ratio of similar to 10(3). Load-resistance inverter using our pentacene-TFT demonstrated a decent voltage gain of similar to 5. (c) 2007 American Institute of Physics.