Journal
APPLIED PHYSICS LETTERS
Volume 91, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2786852
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Funding
- National Research Foundation of Korea [R16-2004-004-01001-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The authors report on the fabrication and characteristics of near ultraviolet nanorod light emitting diodes (LEDs) composed of n-GaN/ZnO nanorod heterostructures on p-GaN substrates. The nanorod LEDs consist of the vertically aligned n-GaN/ZnO coaxial nanorod arrays grown on a p-GaN substrate. The LEDs demonstrated strong near ultraviolet emission at room temperature. The nanorod LEDs were turned on a forward-bias voltage of 5 V, and exhibited a large light emitting area. From electroluminescent spectra, dominant emission peaks were observed at 2.96 and 3.24 eV for an applied current of 2 mA. The origins of the strong and large area light emission are also discussed in terms of enhanced carrier injection from n-GaN nanostructures to p-GaN substrates.
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