Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 91, Issue 15-16, Pages 1392-1397Publisher
ELSEVIER
DOI: 10.1016/j.solmat.2007.05.008
Keywords
CdS; CdTe; AES; CdTe/CdS; inter-diffusion
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Effects of post formation thermal annealing of the CdTe-CdS device on the inter-diffusion of S and Te at the junction in a substrate configuration device have been studied by Auger electron spectroscopy. While the migration of S and Te atoms increases with annealing temperature, the extent of S diffusion is always higher than the diffusion of Te atoms. Inter-diffusion of S and Te causes the formation of CdTe1-xSx ternary compound at the CdTe-CdS interface. (c) 2007 Elsevier B.V. All rights reserved.
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