Journal
APPLIED PHYSICS LETTERS
Volume 91, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2790815
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Wide-gap hydrogenated amorphous silicon oxide (a-SiO:H), fabricated by plasma process using SiH4 and CO2 gas mixture, has been applied to crystalline silicon (c-Si) heterojunction solar cells. It has been demonstrated that incorporation of an a-SiO:H p layer, instead of a hydrogenated amorphous silicon (a-Si:H) p layer, improves the conversion efficiency slightly. Moreover, when an a-SiO:H i layer is formed on the c-Si substrate, Si epitaxial growth that occurs at an a-Si:H/c-Si heterointerface at high deposition temperatures can be prevented entirely. Accordingly, high-efficiency solar cells are fabricated more easily by applying a-SiO:H p-i layers to n-type c-Si heterojunction solar cells. (c) 2007 American Institute of Physics.
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