Shallow acceptors in GaN

Recent high resolution photoluminescence studies of high quality Mg doped GaN show the presence of two acceptors. One is due to Mg and the other labeled A1 has a shallower acceptor defect. The authors investigate likely candidates for this shallow acceptor and conclude that C-N is the most likely possibility. The authors also show that the C-N is passivated by H and the passivated complex is more stable than Mg-Ga-H. (c) 2007 American Institute of Physics.