Journal
PHYSICAL REVIEW B
Volume 76, Issue 15, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.76.155307
Keywords
-
Ask authors/readers for more resources
We explore the full counting statistics of single-electron tunneling through a quantum dot using a quantum point contact as noninvasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function of gate and source-drain voltages for several consecutive electron numbers on the quantum dot. For certain configurations, we observe super-Poissonian statistics for bias voltages at which excited states become accessible. The associated counting distributions interestingly show a bimodal characteristic. Analyzing the time dependence of the number of electron counts, we relate this to a slow switching between different electron configurations on the quantum dot.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available