High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate

Improved nonpolar m-plane (1100) light emitting diode (LED) with a thick InGaN active layer of 8 nm and a thick GaN barrier layer of 37.5 nm for multi-quantum-well (MQW) structure have been fabricated on low extended defect bulk m-plane GaN substrates using metal organic chemical vapor deposition (MOCVD). The peak wavelength of the electroluminescence (EL) emission from the packaged LED was 468 nm. The output power and external quantum efficiency (EQE) were 8.9 mW and 16.8%, respectively, at a DC driving current of 20 mA.