On the switching mechanism in Rose Bengal-based memory devices

Impedance switching has been observed in many organic devices, but the mechanism is still a matter of debate. Reliable switch devices consisting of an organic layer of Rose Bengal derivatives sandwiched in between indium tin oxide and aluminum electrodes were fabricated. Modifying the chemical nature of the organic layers and visualizing the temperature distribution in the organic memory rule out several mechanisms. It is shown that the memory effect originates from filamentary switching. (C) 2007 Elsevier B.V. All rights reserved.