Journal
IEEE ELECTRON DEVICE LETTERS
Volume 28, Issue 10, Pages 884-886Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2007.904906
Keywords
GaN; light-emitting diode (LED); vertical cavity; vertical-cavity LED (VCLED)
Categories
Ask authors/readers for more resources
We report a fabrication and demonstration of a GaN-based high-Q vertical-cavity light-emitting diode (VCLED). The GaN VCLED is composed of a 25-pair high-reflectivity (98%) GaN/AlN distributed Bragg reflector (DBR), an eight-pair SiO2/Ta2O5 dielectric DBR (99%), and a three-A optical thickness InGaN/GaN active region. It shows a very narrow linewidth of 0.52 nm, corresponding to a cavity Q-value of 895 at a driving current of 10 mA and a dominant emission peak wavelength at 465.3 nm. In addition, this VCLED emission linewidth continues to decrease with an increasing injection current, suggesting a possible realization of GaN-based vertical-cavity surface emitting lasers.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available