Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 36, Issue 10, Pages 1395-1403Publisher
MINERALS METALS MATERIALS SOC
DOI: 10.1007/s11664-007-0250-1
Keywords
Y2O3 gate oxide; gate leakage current; interfacial density of states; hysteresis voltage; amorphous silica; silicate; and surface roughness
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This paper describes the physical properties and electrical characteristics of thin Y2O3 gate oxides grown on silicon substrates through reactive radio-frequency (RF) sputtering. The structural and morphological features of these films were studied using X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy. We found that the Y2O3 gate film prepared under an argon-to-oxygen flow ratio of 25:5 and annealed at 700 degrees C exhibited a reduced equivalent oxide thickness, gate leakage current, interfacial density of states, and hysteresis voltage; it also showed an increased breakdown voltage. We attribute this behavior to (1) the optimum oxygen content in the metal oxide film preventing amorphous silica or silicate from forming at the Y2O3/Si interface and (2) the low surface roughness. These materials also exhibit negligible degrees of charge trapping at high electric field stress.
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