Low-temperature transport characteristics and quantum-confinement effects in gate-all-around Si-nanowire N-MOSFET

Gate-all-around n-MOSFETs with Si-nanowire (similar to 7 nm) as the channel body are fabricated and characterized for their low-temperature behavior (similar to 5 K to 295 K). I-DS-V-GS characteristics at low V-DS (similar to 50 mV) exhibit a decrease in current with decreasing temperature in strong inversion up to about similar to 200 K. However, at high V-DS, drain current reverts to typical temperature behavior, i.e., I-DS increases with the reducing temperature due to the increase in phonon-limited mobility (mu(ph)). It is inferred that, at low VDS, the enhancement in mu(ph) at a reduced temperature could be possibly masked by the intersubband scattering on account of subband splitting due to quantum-confinement effects as indicated by subband calculations for nanowire structures.