Journal
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume 46, Issue 36-40, Pages L948-L950Publisher
INST PURE APPLIED PHYSICS
DOI: 10.1143/JJAP.46.L948
Keywords
thick GaInN layer; epitaxial lateral growth; m-plane; PL; LED
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A high-crystalline-quality thick m-plane Ga0.92In0.08N film has been realized by epitaxial lateral overgrowth (ELO). The photoluminescence intensity of thick ELO-GaInN is about 6 times stronger than that of conventional thick GaInN. We fabricated a light-emitting diode (LED) having a GaInN/GaN multiquantum wells (MQWs) active layer on an ELO-GaInN layer. Satellite peaks of (1010) in the 2 theta/omega-scan X-ray diffraction profile from this LED can be clearly observed, suggesting that MQWs having a sharp interface are grown. This new LED exhibits blue-light emission with a peak wavelength of 450 nm.
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