Journal
SURFACE SCIENCE
Volume 601, Issue 19, Pages 4603-4607Publisher
ELSEVIER
DOI: 10.1016/j.susc.2007.07.020
Keywords
metal-insulator interface; surface stress; oxidation; scanning tunneling microscopy; aluminum oxide
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Dramatic changes in the surface morphology have been observed during the oxidation of stepped NiAl(16,14, 1) by LEED and STM. The initial sequence of identical (110) terraces is lifted in favor of large, triangular planes, whose mean size is determined by the mismatch-induced stress that accumulates in the thin alumina film. The asymmetry of the original step direction on NiAl(16,14, 1) with respect to the orientation of the two alumina reflection domains favors the formation of one domain type, for which the stress relief via NiAl step edges is particularly efficient. (c) 2007 Elsevier B.V. All rights reserved.
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