Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 204, Issue 10, Pages 3373-3379Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.200723144
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Funding
- Korea Institute of Industrial Technology(KITECH) [2005-N-PV12-P-03] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We report the successful growth of quaternary Cu2ZnSnSe4 (CZTSe) thin films by pulsed laser deposition (PLD) using Nd:YAG laser. It was found that CZTSe films atomic ratios were close to target atomic ratios with a slight metal excess and selenium deficiency. Quaternary CZTSe films grew and crystallized as a stannite-type structure even at room temperature. All CZTSe films showed a p-type electrical conductivity with a high absorption coefficient of 10(4)-10(5) cm(-1), a bandgap of 1.5 eV and a carrier concentration of the order of 10(17)-10(18) cm(-1). These results show that pulsed laser deposition could be employed as a particularly effective deposition method for the preparation of quaternary compounds thin films. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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