Gigahertz frequency flexible carbon nanotube transistors

We investigate the high frequency performances of flexible field-effect transistors based on carbon nanotubes. A large density of mostly aligned carbon nanotubes deposited on a flexible substrate by dielectrophoresis serves as the channel. The transistors display a constant transconductance up to at least 6 GHz and a current gain cutoff frequency (f(T)) as high as 1 GHz at V-DS=-700 mV. Bending tests show that the devices can withstand a high degree of flexion characterized by a constant transconductance for radius of curvature as small as 3.3 mm. (C) 2007 American Institute of Physics.