Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity

We present a theoretical study of electron mobility in cylindrical gated silicon nanowires at 300 K based on the Kubo-Greenwood formula and the self-consistent solution of the Schrodinger and Poisson equations. A rigorous surface roughness scattering model is derived, which takes into account the roughness-induced fluctuation of the subband wave function, of the electron charge, and of the interface polarization charge. Dielectric screening of the scattering potential is modeled within the random phase approximation, wherein a generalized dielectric function for a multi-subband quasi-one-dimensional electron gas system is derived accounting for the presence of the gate electrode and the mismatch of the dielectric constant between the semiconductor and gate insulator. A nonparabolic correction method is also presented, which is applied to the calculation of the density of states, the matrix element of the scattering potential, and the generalized Lindhard function. The Coulomb scattering due to the fixed interface charge and the intra- and intervalley phonon scattering are included in the mobility calculation in addition to the surface roughness scattering. Using these models, we study the low-field electron mobility and its dependence on the silicon body diameter, effective field, dielectric constant, and gate insulator thickness. (C) 2007 American Institute of Physics.