Substrate temperature changes during molecular beam epitaxy growth of GaMnAs

Our band gap spectroscopy measurements reveal a remarkably big increase of the substrate temperature during the low-temperature molecular beam epitaxy growth of GaMnAs layers. With the help of numerical simulations we explain the effect as a consequence of changing absorption/emission characteristics of the growing epilayer. We discuss possibilities for reducing the substrate temperature variations during the growth. (C) 2007 American Institute of Physics.