Flexible inorganic/organic hybrid thin-film transistors using all-transparent component materials

Inorganic-organic hybrid TFTs have been fabricated at room temperature using IAD-derived high-quality semiconducting In2O3 and a crosslinked spin-coatable polymer gate dielectric. TFTs exhibiting field-effect mobilities up to 160 cm(2) V-1 s(-1), on Si and 10 cm(2) V-1 s(-1) on PET substrates have been demonstrated. TFTs on PET combine good transport characteristics as well as optical transparency and flexibility.