Journal
APPLIED PHYSICS LETTERS
Volume 91, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2795802
Keywords
-
Categories
Ask authors/readers for more resources
We present gallium arsenide (GaAs) metal- oxide- semiconductor capacitors (MOSCAPs) with a thin HfO2 gate dielectric and a thin germanium nitride (GexNy) interfacial passivation layer (IPL). TaN/HfO2/GexNy/GaAs MOSCAPs show a low interface state density and a thin equivalent oxide thickness (1.6 nm). Compared to GaAs MOSCAPs with germanium (Ge) IPL, the GexNy IPL has a smaller slow trap density, which is confirmed by improved C- V characteristics without humps near the flatband voltage. The lower rate of flatband voltage shift and gate leakage decreasing under constant gate voltage stress were also demonstrated in GaAs MOSCAPs with GexNy IPL than the Ge IPL. (C) 2007 American Institute of Physics.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available