Influence of quantum well and barrier composition on the spectral behavior of InGaAs quantum dots-in-a-well infrared photodetectors

We report on the spectral behavior of two different quantum dots-in-a-well infrared photodetectors grown by low- pressure metal-organic chemical vapor deposition. In0.5Ga0.5As quantum dots embedded in an In0.15Ga0.85As/GaAs quantum well (QW) or a GaAs/Al0.2Ga0.8As QW have been incorporated into photodetectors and were characterized. A spectral response in the 3-5 mu m atmospheric window has been achieved by adopting the GaAs/Al0.2Ga0.8As QW. (C) 2007 American Institute of Physics.