Journal
APPLIED PHYSICS LETTERS
Volume 91, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2803219
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- National Research Foundation of Korea [2005-005-J13102] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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High performance thin film transistor (TFT) with atomic layer deposition (ALD) nitrogen doped ZnO (ZnO:N) as an active layer is demonstrated. The electrical properties of ZnO thin films were effectively controlled by in situ nitrogen doping using NH4OH as a source for reactants. Especially, the electron concentration in ZnO was lowered to below 10(15) cm(-3). Good device characteristics were obtained from the inverted staggered type TFTs with ZnO:N channel and ALD Al2O3 gate insulator; mu(sat)=6.7 cm(2)/V s, I-off=2.03x10(-12) A, I-on/off=9.46x10(7), and subthreshold swing=0.67 V/decade. The entire TFT fabrication processes were carried out at below 150 degrees C, which is a favorable process for plastic based flexible display. (C) 2007 American Institute of Physics.
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