High-performance fullerene C60 thin-film transistors operating at low voltages

Low-voltage operation of fullerene C-60 thin-film transistors (TFTs) has been realized using zirconium-silicon oxide (ZSO) as a gate insulator. The gate insulator consisted of triple layers of SiO2/ZSO/SiO2 deposited by rf sputtering. The C-60 TFTs with the insulators operated at a low voltage of 5 V. The surface of the insulator was treated with hexamethyldisilazane (HMDS) or octadecyltrimethoxysilane (ODS). The C-60 TFT with the ODS-treated insulator exhibited higher performance than that with the HMDS-treated insulator, and it had a field-effect mobility of 1.46 cm(2)/V s, threshold voltage of 1.9 V, and a current on/off ratio of 2x10(6). (C) 2007 American Institute of Physics.