Superior nanocrystalline silicon network at enhanced growth rate

Structural transformation from amorphous to nanocrystalline-Si phase accomplished by metastable helium atoms has been identified at low growth-temperature, from helium-diluted silane-plasma in plasma enhanced chemical vapor deposition (PECVD). Enhanced rf-powers provide superior crystallinity that contributes electrically high-conducting nc-Si network with reduced bonded hydrogen content. Quantum confinement effects on optical band gap widening are ensured by estimated nanodimensions of crystallites with enhanced volume-fraction that involves atomic orientations on extremely well-defined lattice planes. Large number of tiny single-domain nanocrystallites cluster together and form larger grains that grow one-over-other along the growth direction and represents an overall corn-like growth. Simultaneous elevation of growth rate warrants enormous technological promise.