Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 54, Issue 11, Pages 2823-2829Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2007.906929
Keywords
Coulomb scattering; Hall effect; MOS devices; silicon carbide; surface-roughness scattering
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Hall-effect measurements of n-channel MOS devices were used to determine the main scattering mechanisms limiting mobility in SiC MOSFETs. MOS-gated Hall characterization, which was performed as a function of gate bias and body bias, indicates that surface-roughness scattering and Coulomb scattering are the main scattering mechanisms limiting electron mobility in SiC MOSFETs at room temperature. A charge-sheet model, including incomplete ionization and Fermi-Dirac statistics, is used to calculate the surface electric fields in order to develop an expression for surface-roughness scattering. In the samples used for this paper, at electron sheet densities less than 1.8 x 10(12) cm(-2), Coulomb scattering dominates, while surface roughness is dominant at higher sheet densities.
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