High performance n-channel thin-film transistors with an amorphous phase C60 film on plastic substrate

We fabricated high mobility, low voltage n-channel transistors on plastic substrates by combining an amorphous phase C-60 film and a high dielectric constant gate insulator titanium silicon oxide (TiSiO2). The transistors exhibited high performance with a threshold voltage of 1.13 V, an inverse subthreshold swing of 252 mV/decade, and a field-effect mobility up to 1 cm(2)/V s at an operating voltage as low as 5 V. The amorphous phase C-60 films can be formed at room temperature, implying that this transistor is suitable for corresponding n-channel transistors in flexible organic logic devices.