Journal
APPLIED PHYSICS LETTERS
Volume 91, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2811956
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Electron beam evaporation in a molecular beam epitaxy reactor was used to deposit, at 400 degrees C, amorphous LaAlO3 high-kappa oxide films on p-type Si(001). X-ray photoelectron spectroscopy and transmission electron microscopy showed that the interface with Si is free of SiO2 or silicates. Electrical measurements performed on as-deposited samples reveal an equivalent oxide thickness as low as 5 A for a film having a physical thickness of 41 A, a leakage current of 5.6x10(-2) A/cm(2) at parallel to V-g-V-FB parallel to=1 V, and no flatband voltage shift.
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