GaP/GaAsP/GaP core-multishell nanowire heterostructures on (111) silicon

GaP/GaAsP/GaP segmented nanowires were grown by gas source molecular beam epitaxy on silicon (111) substrates. The nanowires were grown by the vapour-liquid-solid process using Au nanoparticles. Transmission electron microscopy and energy dispersive x-ray spectroscopy indicated that the wires had wurtzite crystal structure with a core-multishell heterostructure. Stacking faults along the wire were removed after the growth-interrupted interfaces, indicating the potential for defect-free nanowires.