Journal
ADVANCED MATERIALS
Volume 19, Issue 22, Pages 3919-+Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.200700251
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Funding
- Korea Institute of Industrial Technology(KITECH) [10029907] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2007-00632, 핵06A2801] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A memory cell consisting of a Pt/VO2/ Pt switch element and a Pt/NiO/Pt memory element connected in series. By applying a voltage higher than V-th of 0.6 V, the switch element reaches the on state and the cell can be accessed. Since reset and set voltages are higher than V-th, information can be written by simply applying an appropriate voltage to a selected cell. By applying a voltage lower than V-th to the other cells, we can keep the other cells in the off state and prevent interference between the selected cell and the others.
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