Journal
APPLIED SURFACE SCIENCE
Volume 254, Issue 3, Pages 785-788Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.apsusc.2007.05.089
Keywords
combinatorial; thin films
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In pulsed-laser deposition (PLD), there are many processing parameters that influence film properties such as substrate-target distance, background reactive gas pressure, laser energy, substrate temperature and composition in multi-component systems. By introducing a 12.7-mm diameter circular aperture in front of a 76.2-mm silicon wafer and rotating the substrate while changing conditions during the PLD process, these parameters may be studied in a combinatorial fashion, discretely as a function of processing conditions. We demonstrate the use of the aperture technique to systematically study the effects of oxygen partial pressure on the film stoichiometry and growth rate of VO(x), using Rutherford backscattering spectrometry (RBS). In another example, we discuss the effect of growth temperature on TiO(2) films characterized by X-ray diffraction and Fourier transform far-infrared (Terahertz) absorption spectroscopy. We demonstrate that we have considerable combinatorial control of other processing variables besides composition in our combi-PLD system. These may be used to systematically study film growth and properties. (C) 2007 Elsevier B.V. All rights reserved.
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