Journal
JOURNAL OF ELECTRONIC MATERIALS
Volume 36, Issue 12, Pages 1621-1624Publisher
SPRINGER
DOI: 10.1007/s11664-007-0202-9
Keywords
GaN, Fe; semi-insulating; high electron mobility transistor (HEMT); deep acceptor; electron capture cross section; metal-organic vapor phase epitaxy (MOVPE)
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Carrier trapping of Fe (3+)/Fe2+ deep acceptors in epitaxially grown GaN:Fe on sapphire was studied by time-resolved photoluminescence. For the investigated Fe doping levels on the order of 10(18) cm(-3), the luminescence decay times are strongly dependent on the Fe concentration, indicating that Fe centers act as predominant nonradiative recombination channels. Linear dependence of the decay time on the iron concentration allows estimation of the electron capture cross-section for the Fe3+ ions, which is equal to 1.9 x 10(-15) cm(2). The upper bound for the cross-section of the hole capture of Fe2+ was evaluated as 10 x 10(-15) cm
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