Effect of hydrogenation on the metal-semiconductor phase transition in vanadium dioxide thin films

Hydropgen penetration into thin films of vanadium dioxide from aqueous solutions of mono-, di-, and tribasic alcohols is studied. It is shown that this process is reversible, has a catalytic character, and brings about a lowering, of the metal-semiconductor phase transition temperature. It is established that the phase transition in a hydrogenated HxVO2 film is completely suppressed for x > 0.04.