Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 54, Issue 6, Pages 2584-2589Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2007.907989
Keywords
charge sharing; cross-section; DICE latch; let threshold; n-well potential collapse; parasitic bipolar transistor; radiation hardened by design; single event circuit characterization; single event upset
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Heavy-ion testing of a Radiation-Hardened-By-Design (RHBD) 90 nm Dual Interlocked Cell (DICE latch) shows significant directional sensitivity results impacting observed cross-section and LET thresholds. 3-D TCAD simulations show this directional effect is due to charge sharing and parasitic bipolar effects due to n-well potential collapse.
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