Journal
IEEE ELECTRON DEVICE LETTERS
Volume 28, Issue 12, Pages 1080-1082Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2007.910009
Keywords
terms-enhancement mode (e-mode); GaGdO; high kappa; IH-V MOSFET
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Funding
- EPSRC [EP/F002610/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [GR/S61218/01, EP/F002610/1] Funding Source: researchfish
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We present metal-gate high-kappa-dielectric enhancement-mode (e-mode) HI-V MOSFETs with the highest reported effective mobility and transconductance to date. The devices employ a GaGdO high-kappa (kappa = 20) gate stack, a Pt gate, and a delta-doped InGaAs/AlGaAs/GaAs heterostructure. Typical 1-mu m gate length device figures of merit are given as follows: saturation drive current, I-d,I-sat = 407 mu A/mu m; threshold voltage, V-t = +0.26 V; maximum extrinsic transconductance, g(m) = 477 mu S/mu m (the highest reported to date for a III-V MOSFET); gate leakage current, I-g = 30 pA; subthreshold swing, S = 102 mV/dec; on resistance, R-on = 1920 Omega center dot mu m; I-on/I-off ratio = 6.3 x 10(4); and output conductance,
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