Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 204, Issue 12, Pages 3929-3933Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.200777120
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A 1.8 V 2-Mb SPRAM (SPin-transfer torque RAM) chip using 0.2-mu m logic process with MgO tunneling barrier cell is reviewed, which demonstrates the circuit technologies for potential low power non-volatile RAM, or universal memory. This chip features: an array scheme with bit-by-bit bi-directional current write to achieve proper spin-transfer torque writing of 100-ns, and parallelizing-direction current reading with low voltage bit-line that leads to 40-ns access time. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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