4.6 Article Proceedings Paper

Characterization of flux-grown PZN-PT single crystals for high-performance piezo devices

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IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TUFFC.2007.562

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Relaxor ferroelectric Pb(Zn1/3Nb2/3)O-3-xPbTiO(3) (PZN-PT) and Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PMN-PT) single crystals are the potential candidates for future high-performance piezoelectric devices due to their exceptionally high dielectric and piezoelectric properties. Characterization on flux-grown PZN-PT single crystals of different orientations revealed that PZN-(6-7)%PT single crystals show good homogeneity in dielectric and electromechanical properties and composition. When poled in [001] direction, these crystals exhibit high longitudinal-mode properties with dielectric constant (K-T) approximate to 7000, piezoelectric coefficients (d(33)) approximate to 2800 pC/N, and electromechanical coupling factors (k(33)) >= 0.92. For [011]-cut crystals, optimally poled PZN-7%PT single crystal exhibits very high transverse-mode dielectric and piezoelectric properties with K-T >= 5000, d(32) approximate to -3800 pC/N and k(32) >= 0.90. [011]-poled PZN-6%PT has d(32) approximate to -3800 pC/N and comparable k32 and K T values. In comparison with melt-grown PMN- PT single crystals, flux-grown PZN-PT single crystals show good compositional homogeneity, superior and consistent dielectric and electromechanical properties, and higher depolarization temperatures (T-DP).

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