Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 54, Issue 6, Pages 2168-2173Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2007.907870
Keywords
dose rate; enhanced low-dose-rate sensitivity; hydrogen; interface traps; radiation effects; temperature transducer; total ionizing dose; voltage comparator
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It is demonstrated with test transistors and circuits that a small amount of hydrogen trapped in hermetically sealed packages can significantly degrade the total dose and dose rate response of bipolar linear microelectronics. In addition, we show that when exposed to an atmosphere of 100% molecular hydrogen dies with silicon nitride passivation are unaffected, whereas dies with silicon carbide or deposited oxides become very soft at high and low dose rate.
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