Iridium Thin Films Deposited by Liquid Delivery MOCVD using Ir(EtCp)(1,5-COD) with Toluene Solvent

Pure iridium thin films are prepared using iridium(ethylcyclopentadienyl)(1,5-cyclooctadiene) [Ir(EtCp)(1,5-COD)] with toluene solvent by liquid delivery metal-organic (MO)CVD. The deposition of Ir thin films is carried out on various substrates at temperatures in the range 300 - 500 degrees C via the oxygen-assisted pyrolysis of the precursor. The reaction kinetics, film composition, film morphology, mechanical and electrical properties of deposited Ir films are investigated. Annealing in an oxidizing atmosphere at temperatures above 700 degrees C results in an increased oxidation of the films, as proven by X-ray diffraction (XRD) analyses. Obtained films show a low resistivity of 7 mu Omega.cm and preferred crystalline orientation (111), suitable for application in storage capacitor electrodes.