Journal
PHYSICAL REVIEW LETTERS
Volume 99, Issue 23, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.99.236805
Keywords
-
Categories
Ask authors/readers for more resources
We have investigated the transport properties of LaVO3/SrTiO3 Mott-insulator-band-insulator heterointerfaces for various configurations. The (001)-oriented n-type VO2/LaO/TiO2 polar discontinuity is conducting, exhibiting a LaVO3 thickness-dependent metal-insulator transition and low temperature anomalous Hall effect. The (001) p-type VO2/SrO/TiO2 interface, formed by inserting a single layer of bulk metallic SrVO3 or SrO, drives the interface insulating. The (110) heterointerface is also insulating, indicating interface conduction arising from electronic reconstructions.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available