Composition-dependent electrical properties of (Pb, La)(Zr, Sn, Ti)O3 antiferroelectric thin films grown on platinum-buffered silicon substrates

(Pb, La)(Zr, Sn, Ti)O-3 (PLZST) antiferroelectric (AFE) thin films with different compositions were deposited on Pt- buffered silicon wafers by the sol - gel process. The phase structure and the surface morphology of the PLZST AFE thin films were analysed by XRD and SEM, respectively. The electric field induced AFE-to-ferroelectric (AFE - FE) phase transformation behaviour of the PLZST thin films was examined by polarization versus field (P - E) and relative permittivity versus field (epsilon(r) - E) measurements, with emphasis placed on composition-dependent phase switching field. The phase switching current was investigated as a function of a gradually changed dc electric field. Furthermore, the effect of the composition of the PLZST thin films on the Curie temperature (T-c) was also studied in detail.