Journal
APPLIED PHYSICS LETTERS
Volume 91, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.2824818
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Field-effect transistor (FET) device has been fabricated with Langmuir-Blodgett films of C-60 dendrimer. The device showed n-channel normally off characteristics with the field-effect mobility of 2.7x10(-3) cm(2) V-1 s(-1) at 300 K, whose value is twice as high as that (1.4x10(-3) cm(2) V-1 s(-1)) for the FET with spin-coated films of C-60 dendrimer. This originates from the formation of ordered pi-conduction network of C-60 moieties. From the temperature dependence of field-effect mobility, a structural phase transition has been observed at around 300 K. Furthermore, the density of states for impurity levels was estimated in the Langmuir-Blodgett films. (c) 2007 American Institute of Physics.
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