Journal
APPLIED PHYSICS B-LASERS AND OPTICS
Volume 90, Issue 3-4, Pages 543-546Publisher
SPRINGER HEIDELBERG
DOI: 10.1007/s00340-007-2900-7
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ZnO homojunction light-emitting diodes based on ZnO nanowires were fabricated on Si(100) substrates. An N-In codoped p-type ZnO film grown by ultrasonic spray pyrolysis and an unintentionally doped n-type ZnO nanowire quasi-array grown by an easy low-temperature hydrothermal method were employed to form the homojunction diode. Under a forward bias larger than 8 V, electroluminescence, which was composed of an ultraviolet peak centered at 387 nm and a green band around 540 nm, was observed. The electroluminescence emission was contributed by the ZnO nanowires. The results reported here suggest that ZnO-based ultraviolet light-emitting devices could be realized at low cost.
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