Preparation and properties of GaFeO3 thin films grown at various oxygen pressures by pulsed laser deposition

GaFeO3 thin films were prepared on (111)-oriented SrTiO3:Nb substrates under various oxygen pressures from 0.1 to 10 Pa at 700 degrees C by using a pulsed laser deposition method. Effects of the oxygen pressures on the crystallinity, dielectric and ferroelectric properties of the thin films were investigated at room temperature. The results show that the GaFeO3 thin films exhibit ferroelectricity and the properties of the thin films are influenced markedly by the deposition oxygen pressures.