Preparationof Cu2ZnSnS4 thin films by sulfurization of co-electroplated Cu-Zn-Sn precursors

Cu(2)ZnSnS(4) (CZTS) thin films were prepared by sulfurization of electrodeposited Cu-Zn-Sn precursors. The Cu-Zn-Sn precursors were deposited on Mo-coated flass substrates in a one-step process from an electrolyte containint copper(II) sulfate pentahydrate zinc sulfate heptahydrate. The precursors were posited precursors. This method is anticipated to have the advantages of being inexpensive and enabling large-area films to be produced. 580 degrees C and 600 degrees C are shown . The grain size of the film sulfurized at 600 degrees C seems to be slightly larger than that of the film sulfurized at 580 degrees C.A Mo back electrode was deposited on borosilicate glass by electron beam evaporation. The Mo film surface was chemically etched in an ammoniae solution, since as-deposited Mo films had poor adhesion with the precursors.