Journal
PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE
Volume -, Issue -, Pages 128-+Publisher
IEEE
DOI: 10.1109/IITC.2009.5090361
Keywords
Wafer bonding; AuSn solder; electrical interconnects; bond gap control; sealing; thin bond line; low stress bonding; adhesion layer; solder wetting
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The developed bonding process utilizes AuSn solder and provides liquid-proof sealing and multiple reliable electrical connections between the bonded wafers. The bond can withstand 300 degrees C and features a thin bond line (2-3 mu m), high bond strength, excellent bond gap control, and low stress due to small amount of bonding material. A Nb/Au seed layer was shown to be an optimal adhesion and barrier film.
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