Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 7, Issue 23, Pages 12850-12855Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b02336
Keywords
wafer-scale MoS2; transition metal dichalcogenide; TMDC; field-effect transistor; flexible electronics; piezoresistive strain sensing; gauge factor
Funding
- National Science Foundation (NSF) [1264705]
- Swiss National Science Foundation (SNSF) [P2BSP2_148636, P300P2_158502]
- Georgia Tech Research Institute Robert G. Shackelford Fellowship
- Center for Low Energy Systems Technology, one of six centers
- STARnet phase of the Focus Center Research Program (a Semiconductor Research Corporation)
- MARCO
- DARPA
- Air Force Office of Scientific Research (AFSOR) [FA9550-13-1-0032]
- Directorate For Engineering
- Div Of Chem, Bioeng, Env, & Transp Sys [1264705] Funding Source: National Science Foundation
- Swiss National Science Foundation (SNF) [P300P2_158502, P2BSP2_148636] Funding Source: Swiss National Science Foundation (SNF)
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Atomically thin Molybdenum disulfide (MoS2) is a promising two-dimensional semiconductor for high-performance flexible electronics, sensors, transducers, and energy conversion. Here, piezoresistive strain sensing with flexible MoS2 field-effect transistors (FETs) made from highly uniform large-area films is demonstrated. The origin of the piezoresistivity in MoS2 is the strain-induced band gap change, which is confirmed by optical reflection spectroscopy. In addition, the sensitivity to strain can be tuned by more than 1 order of magnitude by adjusting the Fermi level via gate biasing.
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