Journal
INDIAN JOURNAL OF PHYSICS
Volume 83, Issue 7, Pages 969-976Publisher
INDIAN ASSOC CULTIVATION SCIENCE
DOI: 10.1007/s12648-009-0056-5
Keywords
Polypropylene polymer; silicon and neon ions; ion beam modification; carbon clusters; band gap energy
Categories
Ask authors/readers for more resources
A wide variety of material modifications in polymers have been studied by using ion irradiation techniques. Extensive research has focused on to Swift Heavy Ions (MeV's energy), probably because of good controllability and the large penetration length in polymers. High energy ion irradiation tends to damage polymers significantly by electronic excitation and ionization. It may result into the creation of latent tracks and can also cause formation of radicals such as ablation, sputtering, chain scission and intermolecular cross-linking, creation of triple bonds and unsaturated bonds and loss volatile fragments. Polypropylene polymer films of thickness 50 mu m were irradiated to the fluences of 1 x 10(10), 3 x 10(10), 1 x 10(11) , 3 x 10(11), 6 x 10(11) and 1 x 10(12) ions/cm(2) with Si8+ ions of 100 MeV energy from Pelletron accelerator at Inter University Accelerator Centre (IUAC), New Delhi and Ne6+ ions of 145 MeV to the fluences of 10(8), 10(10), 10(11), 10(12) and 10(13) ions/cm(3) from Variable Energy Cyclotron Centre, Kolkata. Optical modifications were characterized by UV towards the red end of the spectrum with the increase of the fluence. Value of optical band gap E-g shows a decreasing trend with ion fluence irradiated with both kinds of ions. Cluster size N, the number of carbon atoms per conjugation length increases with increasing ion dose. Cluster size also increases with the increase of electronic stopping power.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available