Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 7, Issue 48, Pages 26381-26386Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.5b08786
Keywords
solid-state dielectric capacitors; energy storage; antiferroelectrics; thin-films; fatigue
Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2015R1D1A3A01019470, 2014R1A1A4A01004404]
- Priority Research Centers Program through the National Research Foundation of Korea (NRF) - Ministry of Education [2009-0093818]
- National Research Foundation of Korea [2015R1D1A3A01019470, 2014R1A1A4A01004404] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We demonstrate a capacitor with high energy densities, low energy losses, fast discharge times, and high temperature stabilities, based on Pb0.97Y0.02[(Zr0.6Sn0.4)(0.925)Ti-0.075]O-3 (PYZST) antiferroelectric thin-films. PYZST thin-films exhibited a high recoverable energy density of U-reco = 21.0 J/cm(3) with a high energy-storage efficiency of eta = 91.9% under an electric field of 1300 kV/cm, providing faster microsecond discharge times than those of commercial polypropylene capacitors. Moreover, PYZST thin-films exhibited high temperature stabilities with regard to their energy-storage properties over temperatures ranging from room temperature to 100 degrees C and also exhibited strong charge discharge fatigue endurance up to 1 x 10(7) cycles.
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