Experimental investigation on the machining characteristics of single-crystal SiC sawing with the fixed diamond wire

Machining characteristics and surface profiles were systematically investigated during the fixed abrasive diamond wire sawing of single-crystal silicon carbide (SiC). The material removal mechanism involved in the sawing was explored. The scanning electron micrographs examination and the result of surface roughness of the sawn surface and the analysis of the force and specific sawing energy involved in the sawing process indicated that the material removal of single-crystal SiC sawing with fixed diamond wire was dominated by brittle fracture. However, more ploughing striations were obtained in the sawn surface under high wire speed. The sawn surface of the single-crystal SiC indicated the periodical waviness was caused by the reciprocating movement of the fixed diamond wire. The specific sawing energy showed a rapid increase with the decrease of the material removal volume per length of wire when it was below a critical value.