4.2 Review

Physics and applications of aligned carbon nanotubes

Journal

ADVANCES IN PHYSICS
Volume 60, Issue 4, Pages 553-678

Publisher

TAYLOR & FRANCIS LTD
DOI: 10.1080/00018732.2011.599963

Keywords

carbon nanotubes; aligned arrays

Funding

  1. US Department of Energy [DOE DE-FG02-00ER45805]
  2. Defense Threat Reduction Agency [HDTRA1-07-1-0015]

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Ever since the discovery of carbon nanotubes (CNTs) by Iijima in 1991, there have been extensive research efforts on their synthesis, physics, electronics, chemistry, and applications due to the fact that CNTs were predicted to have extraordinary physical, mechanical, chemical, optical, and electronic properties. Among the various forms of CNTs, single-walled and multi-walled, random and aligned, semiconducting and metallic, aligned CNTs are especially important since fundamental physics studies and many important applications will not be possible without alignment. Even though there have been significant endeavors on growing CNTs in an aligned configuration since their discovery, little success had been realized before our first report on growing individually aligned CNTs on various substrates by plasma-enhanced chemical vapor deposition (PECVD) [Science 282 (1998) 1105-1108]. Our report spearheaded a new field on growth, characterization, physics, and applications of aligned CNTs. Up to now, there have been thousands of scientific publications on synthesizing, studying, and utilizing aligned CNTs in various aspects. In this communication, we review the current status of aligned CNTs, the physics for their alignment, their applications in field emission, optical antennas, subwave-length light transmission in CNT-based nanocoax structures, nanocoax arrays for novel solar cell structures, etc. The focus of this review is to examine various aligned CNT systems, either as an individual or as an array, either the orientation is vertical, parallel, or at other angles to the substrate horizon, either the CNT core structures are mostly hollow channels or are composed of complex compartments. Major fabrication methods are illustrated in detail, particularly the most widely used PECVD growth technique on which various device integration schemes are based, followed by applications whereas current limitations and challenges will also be discussed to lay down the foundation for future developments.

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