Journal
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES
Volume 52, Issue 12, Pages 3668-3673Publisher
SCIENCE PRESS
DOI: 10.1007/s11431-009-0369-9
Keywords
ZnO; varistors; Y2O3; electrical properties; deep trap levels
Funding
- National Natural Science Foundation of China [50425721, 50737001]
- 11th Five-year Natural S&T Supporting Plan of China [2006 BAA02A16]
Ask authors/readers for more resources
In this paper discussions on ZnO based varistor ceramics doped with different ratios of Y2O3 are presented. Analysis on the phase and microstructures of the samples indicates that an additional phase is detected in the samples doped with Y2O3, and the average grain size of the specimens decreases from about 9.2 mu m to 4.5 mu m, with an increase in the addition of Y2O3 from 0 mol% to 3 mol%. The corresponding varistor's voltage gradient markedly increases from 462 V/mm to 2340 V/mm, while the nonlinear coefficient decreases from 22.3 to 11.5, respectively. Furthermore, the characteristics of deep trap levels in these ZnO samples are investigated by measuring their dielectric spectroscopies. The trap energy level and capture cross section evaluated by relaxation peak of the Cole-Cole plot vary slightly as the addition of Y2O3 increases. These traps may be ascribed to the intrinsic defects of ZnO lattice.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available